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STB6NK60Z Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 600V - 1Ω - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET
Electrical characteristics
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
Zero gate voltage
IDSS drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
600
VDS = Max rating
VDS = Max rating, TC = 125 °C
V
1 µA
50 µA
VGS = ± 20V
VDS = VGS, ID = 100µA
VGS = 10V, ID = 3 A
±10 µA
3 3.75 4.5 V
1 1.2 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 8 V, ID = 3 A
5
S
Ciss Input capacitance
pF
905
Coss Output capacitance
VDS = 25V, f = 1 MassiveGS =
115
pF
Crss Reverse transfer
0
capacitance
pF
25
Coss
(2)
eq .
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 480V
56
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480V, ID = 6 A,
VGS = 10V
(see Figure 17)
33 46 nC
6
nC
17
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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