STB45NF06T4 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB45NF06, STP45NF06
(T_CASE=25°C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 250µA, V_GS= 0
V_DS = Max rating,
V_DS = Max rating @125°C
V_GS = ±20V
V_DS= V_GS, I_D = 250µA
V_GS= 10V, I_D= 19A
60
V
1 µA
10 µA
±100 nA
2
3
4
V
0.023 0.028 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS > I_D(on) x R_DS(on)max,
I_D =19 A
V_DS =25V , f=1 MHz,
V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 48 V, I_D = 34 A
V_GS = 10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
18
S
920
pF
- 225
pF
80
pF
32 58 nC
- 6.5
nC
14.5
nC
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
rise time
t_d(off)
t_f
Turn-off delay time
fall time
Test conditions
V_DD=30 V, I_D=17 A,
R_G=4.7 Ω, V_GS= 10 V
(see Figure 13)
V_DD=30V, I_D=17 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 13)
Min. Typ. Max. Unit
12
ns
50
ns
30
ns
10
ns
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Doc ID 7433 Rev 5