STB45N60DM2AG Datasheet, PDF (4/15 Pages) STMicroelectronics – Fast-recovery body diode

Electrical characteristics
STB45N60DM2AG
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 600 V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 17 A
Min.
600
Typ. Max. Unit
V
1
µA
100
±5 µA
3
4
5
V
0.085
0.09
3
Ω
Symbol
Ciss
Coss
Crss
Coss
(1)
eq.
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 480 V,
VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 34 A,
VGS = 10 V (see Figure
15: "Gate charge test
circuit")
Min. Typ. Max. Unit
-
2500
-
-
120
-
pF
-
3
-
-
200
-
pF
-
4
-
Ω
-
56
-
-
13
-
nC
-
30
-
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
td(on)
tr
td(off)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 25 A
-
29
-
RG = 4.7 Ω, VGS = 10 V
(see Figure 14:
-
27
-
"Switching times test
-
85
-
ns
circuit for resistive load"
and Figure 19: "Switching _-
6
-
time waveform")
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