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| STB300NH02L Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STB300NH02L - STP300NH02L
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
24
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 20V,
VDS = 20V, Tc=125°C
IGSS
Gate body leakage
current (VDS = 0)
VDS = ±20V
VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA
1
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 80A
TO-220
D²PAK
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 80A
@100°C
TO-220
D²PAK
V
1 µA
10 µA
±100 nA
2
V
1.8 2.2 mâ¦
1.4 1.8 mâ¦
2.7
mâ¦
2.1
mâ¦
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Test conditions
VDS = 15V, f = 1 MHz, VGS =0
VDD= 12V,ID= 120A,
VGS= 10V
(see Figure 13)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
Min. Typ. Max. Unit
7055
pF
3251
pF
307
pF
109.4
nC
30.2
nC
26.4
nC
4.4
â¦
4/14
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