STB25NM60NX Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

Electrical characteristics
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Drain-source
V_{(BR)DSS breakdown voltage}
dv/dt ⁽¹⁾ Drain source voltage slope
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1 mA, V_GS = 0
V_DD = 480 V, I_D = 21 A,
V_GS = 10 V
V_DS = Max rating
V_DS = Max rating, @125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 10.5 A
1. Characteristic value at turn off on inductive load
Min. Typ. Max. Unit
600
V
48
V/ns
1 µA
100 µA
100 nA
2
3
4V
0.130 0.160 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS=15 V_, I_D =11 A
V_DS = 50 V, f = 1 MHz,
V_GS = 0
17
S
2400
pF
200
pF
25
pF
C_{oss eq.} ⁽²⁾
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V
310
pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_g Gate input resistance
V_DD = 480 V, I_D =21 A,
V_GS = 10 V,
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
84
nC
14
nC
44
nC
1.6
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DS
4/18