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| STB20NF06L Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 60V - 0.06Ω - 20A - D2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET | |||
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Electrical characteristics
STB20NF06L - STF20NF06L - STP20NF06L
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
VDS = Max rating
VDS = Max rating,@125°C
VGS = ± 18V
VDS = VGS, ID = 250µA
2
VGS = 10V, ID = 10A
VGS = 5V, ID = 10A
V
1
µA
10 µA
±100 nA
3
4
V
0.060 0.070 â¦
0.075 0.085 â¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS= 15V, ID = 8A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 30V, ID = 20A,
VGS = 10V
(see Figure 16)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
10
S
400
pF
100
pF
40
pF
7.5
nC
2.5
nC
4.2
nC
4/16
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