STB16NF06L_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 60V - 0.07Ω - 16A - D2PAK STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB16NF06L
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
I_D = 250µA, V_GS =0
60
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
V_GS = ± 16V
V_DS = V_GS, I_D = 250µA
1
V_GS = 5V, I_D = 8A
V_GS = 10V, I_D = 8A
Typ. Max. Unit
V
1
µA
10
µA
±100 nA
V
0.08 0.10
Ω
0.07 0.09
Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS>I_D(on) x R_DS(on)max,
I_D = 80A
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 30V, I_D = 8A
R_G = 4.7Ω V_GS = 4.5V
(see Figure 12)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 48V, I_D = 16A,
V_GS = 4.5V, R_G = 4.7Ω
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
17
345
72
29
10
37
20
12.5
7.3
2.1
3.1
Max.
10
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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