STB12NM50FD_06 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh™ Power MOSFET (with fast diode)

Electrical characteristics
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1mA, V_GS= 0
500
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±30V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
3
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 6A
1
µA
10 µA
±100 nA
4
5
V
0.32 0.4 Ω
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=15V, I}_D ^{= 6A}
9.8
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V, f=1 MHz,
V_GS=0
1000
pF
390
pF
20
pF
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=400V, I_D = 3A
V_GS =10V
(see Figure 11)
12
nC
3
nC
7
nC
f=1 MHz Gate DC Bias= 0
R_G Gate input resistance
test signal level = 20mV
2
Ω
open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
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