STB120NF10T4 Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP

Electrical characteristics
2
Electrical characteristics
STB/F/PW120NF10
(T_CASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS= 0
100
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating@125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 60 A ⁽¹⁾
1. For TO-220FP I_D = 40 A
Typ. Max. Unit
V
1
µA
10 µA
±100 nA
4
V
0.009 0.0105 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=25 V, I}_D ^{= 60 A}
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25 V, f=1 MHz,
V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=80 V, I_D = 120 A
V_GS =10 V
(see Figure 16)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
-
Typ.
90
Max. Unit
S
5200
pF
-
785
pF
325
pF
172 233 nC
-
32
nC
64
nC
4/21
Doc ID 9522 Rev 7