STB100NF03L-03_06 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

Electrical characteristics
STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
V_DS = max ratings
V_DS = max ratings,
T_C = 125°C
V_GS = ± 16V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 50A
V_GS = 4.5V, I_D = 50A
30
V
1
µA
10
µA
±100 nA
1
1.7
2.5
V
0.0026 0.0032 Ω
0.0032 0.0045 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS>I_D(on)xR_DS(on)max _,
I_D = 30A
10
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 15V, I_D = 50A
R_G = 4.7Ω V_GS = 4.5V
(see Figure 13)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 24V, I_D = 100A,
V_GS = 5V
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Typ.
6200
1720
300
35
315
115
95
88
22.5
36
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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