SM4T33CAY Datasheet, PDF (4/12 Pages) STMicroelectronics – Automotive 400 W Transil

Characteristics
SM4TY
Figure 3.
500 ^PPP(W)
Peak pulse power dissipation
versus initial junction temperature
Figure 4. Peak pulse power versus
exponential pulse duration
(T_j initial = 25 °C)
10.0 ^PPP(kW)
Pulse = 10/1000 µs
400
300
1.0
200
100
0
0
T_j(°C)
25
50
75
100
125
150
175
0.1
1.0E-03
1.0E-02
1.0E-01
tp(ms)
1.0E+00
1.0E+01
Figure 5.
Clamping voltage versus peak
pulse current (exponential
waveform, maximum values)
1000.0 ^IPP(A)
T_jinitial = 25 °C
100.0
8/20 µs
10.0
10/1000 µs
1.0
Figure 6.
C(pF)
10000
1000
Junction capacitance versus
reverse applied voltage for
unidirectional types (typical values)
SM4T6V7AY
F = 1 Mhz
V_OSC = 30 mV_RMS
T_j = 25 °C
SM4T30AY
100
SM4T82AY
0.1
1
V_CL(V)
10
10
100
1000
1
V_R(V)
10
100
1000
Figure 7.
C(pF)
10000
1000
100
10
1
Junction capacitance versus
Figure 8.
reverse applied voltage for
bidirectional types (typical values)
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
SM4T6V7CAY
F = 1 Mhz
V_OSC = 30 mV_RMS
T_j = 25 °C
Z_th(j-a)/R_th(j-a)
1.00
Recommended pad layout
Printed circuit board FR4,
copper thickness = 35 µm
0.10
SM4T30CAY
SM4T82CAY
V_R(V)
0.01
tp(s)
10
100
1000
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
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Doc ID 17862 Rev 3