SD2921 Datasheet, PDF (4/10 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2921
TYPICAL PERFORMANCE
Gate-Source Voltages vs Case Temperature
1.1
1.05
1
0.95
0.9
0.85
-25
Id = 5A
Id = 4A
Id = 2A
Id = 1A
Id = .25A
VDS = 10V
Id = .1A
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
Output Power vs Gate Voltage
200
150
100
VDD= 50 V
IDQ= 250 m A
f = 30MHz
Fixed Pin
Tfl= 25°C
Tfl= -2 0°C
Tfl= 80°C
50
0
0
1
2
3
4
5
VGS GATE-SOURCE VOLTAGE (V)
6
SC 13 21 0
Power Gain vs Output Power
26.5
26
25.5
25
24.5
0
f =30 MHz
VDD= 50 V
IDQ= 250 mA
50
100
150
Pout, OUTPUT POWER (W)
Output Power vs Input Power
200
S C13170
250
200
150
100
VDD= 50 V
VDD= 40 V
50
f = 30 MHz
IDQ= 250 m A
0
0.02 0.1 0.18 0.26 0.34 0.42 0.5 0.58 0.66
Pi n, INPUT POWER (W)
SC13180
Efficiency vs Output Power
60
40
20
0
0
f= 30MHz
VDD= 50 V
IDQ= 250 mA
50
100
150
Pout, OUTPUTPOWER (W)
200
SC13190
Output Power vs Voltage Supply
200
150
Pin= 0.6W
Pin= 0.4W
100
Pin= 0.2W
50
0
24
f = 30 MHz
IDQ= 250 mA
28
32
36
40
44
VDD, SU PPLY VOLTAGE (V)
48
SC1 32 00
4/10