M28R400CT-KGD Datasheet, PDF (4/11 Pages) STMicroelectronics – Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

M28R400CT-KGD, M28R400CB-KGD
FUNCTIONAL SPECIFICATION
Refer to the M28R400C (document number 7653
on the ST Internet web site http://www.st.com) for
full functional and electrical specifications of the
product.
Table 2. and Table 3. give the main product spec-
ification and operating conditions while Table 4.
and Table 5. summarize the Read and Write AC
parameters which differ from those given in the
M28R400C datasheet.
See Table 6. and Table 7. for details of the die’s
physical specification and manufacturing.
Table 2. Product Specification
Product Root Part Number
M28R400CT
M28R400CB
Speed Option
100ns
Delivery Form
Inked or mapped dice on
whole unsawn wafer
Table 3. Operating Conditions
Supply Voltage
V_DD = V_DDQ = 1.65V to 2.2V
Junction Temperature
Under Bias
TJ (max) = 125°C
Operating Temperature −40°C to +85°C
Table 4. Read AC Characteristics
Symbol
Description
Value Unit
t_AVAV
Address Valid to Next
Address Valid (min)
100 ns
t_AVQV
Address Valid to Output
Valid (max)
100
ns
t_EHQZ
Chip Enable High to
Output Hi-Z (max)
25
ns
t_ELQV
Chip Enable Low to
Output Valid (max)
100 ns
t_GHQZ
Output Enable High to
Output Hi-Z (max)
25
ns
t_GLQV
Output Enable Low to
Output Valid (max)
30
ns
Table 5. Write AC Characteristics
Symbol
Description
Value Unit
t_AVAV
Address Valid to Next
Address Valid (min)
100
ns
t_ELQV
Chip Enable Low to
Output Valid (max)
100
ns
Table 6. Physical Specification
Die Dimensions, X by Y ^{141.024 mils x 98.504 mils}
(with scribe line)
3.582mm x 2.502mm
Die Dimensions, X by Y
(without scribe line)
137.008mils x 94.488mils
3.480mm x 2.400mm
Die Thickness
9.84 mils
725µm
Bond Pad Size
3.56 mils x 3.56 mils
90.4µm x 90.4µm
Pad Area Free of
Passivation
12.67 mils²
8172µm²
Pad per Die
46
Bond Pad Metallization
AlCU, TiN
Die Backside
No Metal
May be grounded
Passivation
USG, Si₃N₄
Table 7. Manufacturing Information
Manufacturing Location -
Die Revision
Catania (M5 fab), Italy – V2
Manufacturing Location -
Die Revision
Agrate (R2 fab), Italy – V1
Wafer Sort and Test
Location
Agrate and Catania, Italy
Manufacturing ID
SA2B9AZ
Preparation for Shipment Agrate and Catania, Italy
Fabrication Process
0.18µm technology
4/11