HCF4050B Datasheet, PDF (4/9 Pages) STMicroelectronics – HEX BUFFER/CONVERTER (NON INVERTING)

HCF4050B
DYNAMIC ELECTRICAL CHARACTERISTICS (T_amb = 25°C, C_L = 50pF, R_L = 200KΩ, t_r = t_f = 20 ns)
Symbol
Parameter
Test Condition
V_DD (V) V_I (V)
t_TLH Output Transition Time
t_THL Output Transition Time
5
5
10
10
15
15
5
5
10
10
15
15
t_PLH Propagation Delay Time
5
5
10
10
5
10
15
15
5
15
t_PHL Propagation Delay Time
5
5
10
10
5
10
15
15
5
15
(*) Typical temperature coefficient for all V_DD value is 0.3 %/°C.
Value (*)
Unit
Min. Typ. Max.
80 160
40 80 ns
30 60
30 60
20 40 ns
15 30
70 140
40 80
45 90 ns
30 60
40 80
55 110
22 55
50 100 ns
15 30
50 100
TEST CIRCUIT
C_L = 50pF or equivalent (includes jig and probe capacitance)
R_L = 200KΩ
R_T = Z_OUT of pulse generator (typically 50Ω)
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