HCC40109B Datasheet, PDF (4/12 Pages) STMicroelectronics – QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER

HCC/HCF40109B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Value
V_I V_O I_O V_CC V_DD
T_{L ow}*
25 °C
T_{Hig h}*
Unit
(V) (V) (V) (V) (V) _{Min. Max. Min. Typ. Max. Min. Max.}
I_OH,
I_OL**
3-State
Output
Leakage
Current
HCC
Types ^{0/18 0/18}
HCF
Types ^{0/15 0/15}
18
± 0.4
±10 ^{- 4} ± 0.4
± 12
µA
15
± 1.0
±10 ^{- 4} ± 1.0
± 7.5
C_I Input Capacitance
Any Input
5 7.5
pF
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
** Forced output disabled.
DYNAMIC ELECTRICAL CHARACTERISTICS (T_amb = 25°C, C_L = 50pF, R_L = 200kΩ,
typical temperature coefficient for all V_DD values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
Parameter
t_PHL,
t_PLH
Propagation Delay Time
(data input to output)
High to Low Level
Test Conditions
Value
Shifting Mode
V_CC (V) V _DD (V) Min. Typ. Max.
Unit
5
10
300 600
L-H
5
15
220 440
10
15
10
5
180 360
850 1600
ns
H-L
15
5
15
10
850 1600
290 580
Low to High Level
5
10
130 260
L-H
5
15
10
15
10
5
120 240
70 140
230 460
ns
H-L
15
5
15
10
230 460
80 160
t_PHZ 3-State Disable Delay Time
Output High to High Impedance
L-H
5
10
5
15
10
15
10
5
60 120
50 100
35 70
120 240
ns
H-L
15
5
15
10
120 240
40 80
t_{PZ H} High Impedance to Output High
L-H
5
10
5
15
10
15
10
5
320 640
230 460
180 360
800 1500
ns
H-L
15
5
15
10
800 1500
280 560
t_PLZ Output Low to High Impedance
L-H
5
10
5
15
10
15
10
5
370 740
300 600
250 500
850 1600
ns
H-L
15
5
15
10
850 1600
350 700
4/12