EMIF08-0402T16 Datasheet, PDF (4/12 Pages) STMicroelectronics – High efficiency in EMI filtering

Characteristics
EMIF08-0402T16
Figure 4. S21 attenuation measurements
S21 (dB)
0
-5
- 10
- 15
- 20
- 25
- 30
- 35
- 40
- 45
- 50
100k
1M
I1 - O1
I3 - O3
I5 - O5
I7 - O7
F (Hz)
10M
100M
1G
I2 - O2
I4 - O4
I6 - O6
I8 - O8
Figure 5. Analog crosstalk measurements
XTalk (dB)
0
- 10
I1 - O2
I1 - O8
- 20
I1 - O4
- 30
- 40
- 50
- 60
- 70
- 80
- 90
- 100
- 110
- 120
100k
1M
10M
100M
F (Hz)
1G
Figure 6. ESD response to IEC 61000-4-2
(+15 kV contact discharge)
10 V / Div
1 29.4 V
2 20.0 V
3 19.1 V
4 15.4 V
1 VCL : Peak clamping voltage
2 VCL :clamping voltage @ 30 ns
3 VCL :clamping voltage @ 60 ns
4 VCL :clamping voltage @ 100 ns
20 ns / Div
Figure 7.
5 V / Div
ESD response to IEC 61000-4-2
(-15 kV contact discharge)
1 -15.7 V
2 -5.4 V
3 -4.6 V
4 -2.3 V
20 ns / Div
1 VCL : Peak clamping voltage
2 VCL :clamping voltage @ 30 ns
3 VCL :clamping voltage @ 60 ns
4 V_CL :clamping voltage @ 100 ns
Figure 8. Line capacitance versus applied
voltage
CLINE(pF)
20
15
F = 1 MHz
V_OSC = 30 mV
T_j = 25 °C
Figure 9. Typical digital crosstalk
V IN = 3 V
tR^VtR=^IN=t ⁼F_tF3=_=V2_2nn_ss
10
5
V_LINE (V)
0
0
1
2
3
4
5
5 ns / Div
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Doc ID 023437 Rev 1