BYW81G-200 Datasheet, PDF (4/6 Pages) STMicroelectronics – VERY LOW FORWARD LOSSES

BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 7: Average current versus ambient
temperature.
(duty cycle : 0.5) (BYW81P)
Fig. 8: Average current versus ambient
temperature.
(duty cycle : 0.5) (BYW81PI / BYW81G)
IF(av)(A)
IF(av)(A)
16
16
15
15
Rth(j-a)=Rth(j-c)
14
Rth(j-a)=Rth(j-c)
14
13
13
12
12
11
11
10
Rth(j-a)=15 ^oC/W
10
9
9
Rth(j-a)=15 ^o C/W
8
8
7 _=0.5
6
T
) ⁵
4
t(s ³
2
c ₁
=tp/T
tp
Tamb(oC)
u ₀
d ^{0 20 40 60 80 100 120 140 160}
7 _=0.5
6
T
5
4
3
2
1
=tp/T
tp
Tamb(oC)
0
0 20 40 60 80 100 120 140 160
Pro _t(s) Fig. 9: Junction capacitance versus reverse
te ^{c voltage applied (Typical values).}
Fig. 10: Recovery charges versus dI_F/dt.
le du _C(pF)
so ^{ro 120}
b ^P ₁₁₅
- ^{O te 110}
) ^le ₁₀₅
t(s ^{so 100}
c ^b ₉₅
du _- ^O ₉₀
ro ⁾ ₈₅
P _{t(s 80}
te ^{c 1}
F=1Mhz Tj=25 ^oC
VR(V)
10
30 50 70
sole ^{rodu Fig. 11: Peak reverse current versus dIF/dt.}
QRR(nC)
60
90%CONFIDENCE
50 IF=IF(av)
40
30
20
10
0
1
Tj=100 ^OC
Tj=25 ^OC
dIF/dt(A/us)
10
20
40 60 80
Fig. 12: Dynamic parameters versus junction
temperature.
Ob lete P IRM(A)
3.0
o^{90%CONFIDENCE}
s _2.5 IF=IF(av)
Ob2.0
Tj=100 ^OC
QRR;IRM[Tj]/QRR;IRM[Tj=125^oC]
1.50
1.25
1.00
IRM
1.5
0.75
QRR
1.0
0.50
0.5
0.0
1
Tj=25 ^OC
dIF/dt(A/us)
10
20
40 60 80
0.25
0.00
0
Tj(^oC)
25 50 75 100 125 150
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