BYW29FP-200 Datasheet, PDF (4/7 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY DIODES

BYW29/F/FP/G-200
Fig.5-2 : Non repetitive surge peak forward cur-
rent versus overload duration (TO-220FPAC,
ISOWATT220AC).
IM(A)
60
50
40
30
20
10 ^IM
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Tc=25°C
Tc=75°C
Tc=100°C
1.E+00
Fig.6 : Average current versus ambient tempera-
ture. (δ = 0.5)
IF(av)(A)
10
9
8
7
6
5
4
3
2
1
0
0
25
Rth(j-a)=Rth(j-c)
ISOWATT220AC
TO-220AC/D²PAK
TO-220FPAC
Rth(j-a)=15°C:W
Tamb(°C)
50
75
100
125
150
Fig.7 : Junction capacitance versus reverse volt-
age applied (Typical values).
Fig.8 : Reverse recovery charges versus dI_F/dt
(90%confidence).
C(pF)
100
F=1MHz
Vosc =30mV
Tj=25°C
Qrr(nC)
1000
IF=8A
VR=100V
Tj=100°C
100
10
1
VR(V)
10
100
1000
10
10
dIF/dt(A/µs)
100
1000
Fig.9 : Peak reverse recovery current versus
dIF/dt (90% confidence).
Fig.10 : Dynamic parameters versus junction tem-
perature.
IRM(A)
100
IF=8A
VR=100V
Tj=100°C
10
1
10
dIF/dt(A/µs)
100
Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C]
1.50
1.25
IF=8A
VR=100V
1.00
IRM
0.75
0.50
QRR
1000
0.25
0.00
0
Tj(°C)
25
50
75
100
125
150
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