BTB04-600SL Datasheet, PDF (4/5 Pages) STMicroelectronics – STANDARD 4A TRIAC

BTB04-600SL
Fig. 5: Surge peak on-state current versus number
of cycles.
ITSM(A)
40
35
Non repetitive
30
Tj initial=25°C
25
20
Repetitive
15
Tc=110°C
10
5
Number of cycles
0
1
10
100
t=20ms
1000
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I²t.
ITSM(A), I²t (A²s)
1000
Tj initial=25°C
100
dI/dt limitation:
50A/µs
ITSM
10
1
0.01
tp(ms)
0.10
1.00
I²t
10.00
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C]
3.0
2.5
2.0
IGT
1.5
1.0
IH & IL
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val-
ues).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
dV/dt (V/µs)
1.0
10.0
100.0
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
Fig. 10: Relative variation of static dV/dt immunity
versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
25
50
75
100
dV/dt [Tj] / dV/dt [Tj = 125°C]
8
7
6
5
4
3
2
1
0
125
25
Tj(°C)
50
75
VD=VR=400V
100
125
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