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| BCP56-16 Datasheet, PDF (4/9 Pages) STMicroelectronics – Low power NPN Transistor | |||
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Electrical characteristics
2
Electrical characteristics
BCP56-16
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE =0)
VCB = 30V
VCB = 30V; Tj = 125°C
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB =0)
IC = 20mA
V(BR)CBO
Collector-base
breakdown voltage
(IE =0)
IC = 100µA
V(BR)EBO
Emitter-base breakdown
voltage (IC =0)
IE = 10µA
VCE(sat) (2)
Collector-emitter
saturation voltage
IC = 500mA IB = 50mA
VBE(on) (2) Base-emitter on voltage IC = 500mA VCE = 2V
hFE (2) DC current gain
IC = 5mA
IC = 150mA
IC = 500mA
VCE = 2V
VCE = 2V
VCE = 2V
Min. Typ. Max. Unit
100 nA
10 µA
80
V
100
V
5
V
0.5 V
1
V
40
100
250
25
Note (2) Pulsed duration = 300 µs, duty cycle â¤1.5%
4/9
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