BAT48_11 Datasheet, PDF (4/8 Pages) STMicroelectronics – Small signal Schottky diode

Characteristics
BAT48
Figure 3.
Reverse leakage current versus
reverse applied voltage
(typical values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
5
10
15
20
25
30
35
40
Figure 4.
Reverse leakage current versus
junction temperature
(typical values)
IR(µA)
1.E+04
VR=40V
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0
Tj(°C)
25
50
75
100
125
Figure 5.
Junction capacitance versus
reverse applied voltage
(typical values)
C(pF)
35
30
25
F=1MHz
VOSC=30mVRMS
Tj=25°C
20
15
10
5
VR(V)
0
0
5
10
15
20
25
30
35
40
Figure 6. Forward voltage drop versus
forward current (typical values)
IFM(A)
1.E+00
1.E-01
1.E-02
Tj=125°C
Tj=25°C
1.E-03
1.E-04
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOD-323)
Zth(j-a)/Rth(j-a)
1.00
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (SOD-323)
Rth(j-a)(°C/W)
600
550
printed circuit board, epoxy FR4, e_CU=35 µm
0.10 ^{Single pulse}
SOD-323
Epoxy FR4
SCU = 2.25 mm2
eCU = 35 µm
500
450
400
epoxy FR4 with recommended pad layout, e_CU = 35 µm
0.01
1.E-02
1.E-01
1.E+00
1.E+01
tp(s)
1.E+02
350
300
0
SCU(mm²)
5
10
15
20
25 30
35
40
45
50
4/8
Doc ID 12634 Rev 2