BAS70KFILM Datasheet, PDF (4/14 Pages) STMicroelectronics – Low capacitance, low series inductance and resistance Schottky diodes

Characteristics
BAS70
Figure 7. Forward voltage drop versus
forward current (typical values)
I_FM(mA)
1.E+02
Tj=125 °C
1.E+01
Tj=25 °C
1.E+00
Figure 8.
Differential forward resistance
versus forward current
(typical values)
RF (Ω)
1000
F=100 MHz
Tj=25 °C
100
1.E-01
VFM(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z_th(j-a) (°C/W)
1000
printed circuit board, epoxy FR4 e_CU = 35 µm SOT-323-6L
Single pulse
SOT-323-6L
100
10
0.1
IF(mA)
1.0
10.0
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z_th(j-a) /R_th(j-a)
1.00
Single pulse
SOT-23
0.10
Aluminesubstrate
10 x 8 x 0.5 mm
10
1.E-02
1.E-01
tP(s)
1.E+00
1.E+01
1.E+02
Figure 11. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z_th(j-a) /R_th(j-a)
1.00
Single pulse
SOD-323
alluminium oxide substrate 10 x 8 x 0.5 mm SOT-23
0.01
1.E-02
1.E-01
1.E+00
1.E+01
tP(s)
1.E+02
Figure 12. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z_th(j-a) /R_th(j-a)
1.00
Single pulse
SOT-666
0.10
Epoxy FR4
S_CU=2.25 mm²
e_CU=35 µm
0.10
Epoxy FR4
e_CU=35 µm
printed circuit board, epoxy FR4 e_CU = 35 µm SOD-323
0.01
1.E-02
1.E-01
1.E+00
1.E+01
tP(s)
1.E+02
printed circuit board, epoxy FR4 e_CU = 35 µm SOT-666
0.01
1.E-03
1.E-02
1.E-01
1.E+00
tP(s)
1.E+01
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Doc ID 12563 Rev 2