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| 3STF1640 Datasheet, PDF (4/12 Pages) STMicroelectronics – Very low collector-emitter saturation voltage | |||
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Electrical characteristics
2
Electrical characteristics
3STF1640
Tcase = 25 °C unless otherwise specified.
Symbol
Table 4. Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
IEBO
Emitter cut-off current
(IC = 0)
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
Collector-emitter
V(BR)CEO(1) breakdown voltage
(IB = 0)
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VBE(sat) (1)
Base-emitter saturation
voltage
VCB = 40 V
VEB = 5 V
IC = 100 µA
IC = 10 mA
IE = 100 µA
IC = 1 A, IB = 20 mA
IC = 1 A, IB = 100 mA
IC = 6 A, IB = 300 mA
IC = 6 A, IB = 6 mA
0.1 µA
0.1 µA
40
V
40
V
7
V
50
mV
40
mV
170
mV
1.1 V
IC = 1 A, VCE = 1 V
350
hFE (1) DC current gain
IC = 6 A, VCE = 1 V
100
IC = 20 A, VCE = 1 V
20
fT
Transition frequency
IC = 0.1 A
VCE = 10 V
f = 100 MHz
100
MHz
CCBO
Collector-base
capacitance (IE = 0)
f = 1 MHz VCB = 10 V
30
pF
Resistive load
ton
Turn-on time
IC = 1.5 A
VCC = 10 V
TBD
ns
toff
Turn-off time
IB(on) = - IB(off) = 150 mA
VBB(off) = - 5 V
TBD
ns
1. Pulse test: pulse duration ⤠300 µs, duty cycle ⤠2 %
4/12
DocID023648 Rev 3
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