SRT512_12 Datasheet, PDF (39/46 Pages) STMicroelectronics – 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions

SRT512
10 DC and AC parameters
DC and AC parameters
Table 6. Operating conditions
Symbol
Parameter
T_A
Ambient operating temperature
Min.
Max.
Unit
–20
85
°C
Table 7. DC characteristics
Symbol
Parameter
Condition
Min Typ
V_CC Regulated voltage
2.5
-
I_CC
Supply current (active in read)
V_CC = 3.0 V
-
-
I_CC
Supply current (active in write)
V_CC = 3.0 V
-
-
V_RET
C_TUN
Backscattering-induced voltage
Internal tuning capacitor
ISO10373-6
(1)
20
-
−3% 64.0
1. Based on automated production test equipment for which the typical value is 66.2 pF.
Max
3.5
100
250
-
+3%
Unit
V
µA
µA
mV
pF
Table 8. AC characteristics⁽¹⁾
Symbol
Parameter
Condition
Min Max Unit
f_CC External RF signal frequency
MI_CARRIER Carrier modulation index
t_RFR, t_RFF 10% rise and fall times
t_RFSBL Minimum pulse width for start bit
t_JIT ASK modulation data jitter
t_{MIN CD}
Minimum time from carrier
generation to first data
MI=(A-B)/(A+B)
ETU = 128/f_CC
Coupler to SRT512
13.553 13.567 MHz
8
14
%
0.8
2.5
µs
9.44
µs
–2
+2
µs
5
-
ms
f_S Subcarrier frequency
f_CC/16
847.5
kHz
t₀
Antenna reversal delay
128/f_S
151
µs
t₁
Synchronization delay
128/f_S
151
µs
t₂
Answer to new request delay
14 ETU
132
µs
t_DR Time between request characters
Coupler to SRT512
0
57
µs
t_DA Time between answer characters
SRT512 to coupler
0
µs
With no auto-erase cycle
(OTP)
-
3
ms
t_W Programming time for write
With auto-erase cycle
(EEPROM)
-
5
ms
Binary counter decrement -
7
ms
Doc ID 13277 Rev 6
39/46