M58LW032D_04 Datasheet, PDF (36/50 Pages) STMicroelectronics – 32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory

M58LW032D
Table 26. CFI - Device Voltage and Timing Specification
Address
x16
x8⁽⁴⁾
Data
Description
001Bh
36h
27h ^{(1) V}DD ^{Min, 2.7V}
001Ch
38h
36h ^{(1) V}DD ^{max, 3.6V}
001Dh
3Ah
00h ^{(2) V}PP ^{min – Not Available}
001Eh
3Ch
00h ^{(2) V}PP ^{max – Not Available}
001Fh
3Eh
04h
2ⁿ µs typical time-out for Word, DWord prog – Not Available
0020h
40h
08h
2ⁿ µs, typical time-out for max buffer write
0021h
42h
0Ah
2ⁿ ms, typical time-out for Erase Block
0022h
44h
00h ⁽³⁾ 2ⁿ ms, typical time-out for chip erase – Not Available
0023h
46h
04h
2ⁿ x typical for Word Dword time-out max – Not Available
0024h
48h
04h
2ⁿ x typical for buffer write time-out max
0025h
4Ah
04h
2ⁿ x typical for individual block erase time-out maximum
0026h
4Ch
00h ⁽³⁾ 2ⁿ x typical for chip erase max time-out – Not Available
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. In x8 mode, A0 must be set to V_IL, otherwise 00h will be output.
Table 27. Device Geometry Definition
Address
x16
x8⁽¹⁾
Data
Description
0027h
4Eh
16h
n where 2ⁿ is number of bytes memory Size
0028h
50h
02h
Device Interface
0029h
52h
00h
Organization Sync./Async.
002Ah
54h
002Bh
56h
05h
Maximum number of bytes in Write Buffer, 2ⁿ
00h
002Ch
58h
01h
Bit7-0 = number of Erase Block Regions in device
002Dh
5Ah
002Eh
5Ch
1Fh
Number (n-1) of Erase Blocks of identical size; n=64
00h
002Fh
5Eh
0030h
60h
00h
Erase Block Region Information
02h
x 256 bytes per Erase block (128K bytes)
Note: 1. In x8 mode, A0 must be set to V_IL, otherwise 00h will be output.
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