VNP35NV04-E Datasheet, PDF (3/19 Pages) STMicroelectronics – FULLY AUTOPROTECTED POWER MOSFET

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
Symbol
R_thj-case
R_thj-amb
Parameter
PowerSO-10™
Thermal Resistance Junction-case}}} MAX
1
Thermal Resistance Junction-ambient MAX
50(*)
Value
D2PAK
1
50(*)
TO-220
1
50
TO-247
0.6
30
Unit
°C/W
°C/W
(*) When mounted on a standard single-sided FR4 board with 50mm² of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < T_j < 150°C, unless otherwise specified)
OFF
Symbol
V_CLAMP
V_CLTH
V_INTH
I_ISS
V_INCL
I_DSS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (V_IN=0V)
Test Conditions
V_IN=0V; I_D=15A
V_IN=0V; I_D=2mA
V_DS=V_IN; I_D=1mA
V_DS=0V; V_IN=5V
I_IN=1mA
I_IN=-1mA
V_DS=13V; V_IN=0V; T_j=25°C
V_DS=25V; V_IN=0V
Min Typ Max Unit
40
45
55
V
36
V
0.5
2.5
V
100 150
µA
6
6.8
8
V
-1.0
-0.3
30
µA
75
ON
Symbol
Parameter
Test Conditions
R_DS(on)
Static Drain-source On
Resistance
V_IN=5V; I_D=15A; T_j=25°C
V_IN=5V; I_D=15A; T_j=150°C
Max
D²PAK
Unit
PowerSO-10
TO-220 / TO-247
10
13
mΩ
20
24
3/19
1