VNP35N07 Datasheet, PDF (3/11 Pages) STMicroelectronics – ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

VNP35N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symb ol
t_d(on)
tr
t_d(off)
tf
td(on)
t_r
td(off)
t_f
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
V_DD = 28 V
Vgen = 10 V
(see figure 3)
I_d = 18 A
Rgen = 10 Ω
VDD = 28 V
V_gen = 10 V
(see figure 3)
Id = 18 A
R_gen = 1000 Ω
VDD = 28 V
V_in = 10 V
VDD = 12 V
ID = 18 A
R_gen = 10 Ω
ID = 18 A Vin = 10 V
Min.
Typ .
100
350
650
200
500
2.7
10
4.3
60
M a x.
200
600
1000
350
800
4.2
16
6.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
100
nC
SOURCE DRAIN DIODE
Symb ol
VSD (∗)
t r r(∗∗ )
Qr r(∗∗)
IRRM (∗∗)
P a ram et er
Forward O n Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 18 A Vin = 0
ISD = 18 A di/dt = 100 A/µs
V_DD = 30 V T_j = 25 ^oC
(see test circuit, figure 5)
Min.
Typ .
250
1
8
M a x.
1.6
Unit
V
ns
µC
A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim
Drain Current Limit
t_dlim(∗∗) St ep Response
Current Limit
Vin = 10 V
V_in = 5 V
V_in = 10 V
Vin = 5 V
VDS = 13 V
V_DS = 13 V
T_jsh(∗∗) Overtemperature
Shutdown
T_jrs(∗∗) Overtemperature Reset
I_gf(∗∗) Fault Sink Current
V_in = 10 V V_DS = 13 V
Vin = 5 V VDS = 13 V
E_as(∗∗) Single Pulse
starting T_j = 25 ^oC V_DD = 20 V
Avalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
25
25
150
135
2.5
Typ .
35
35
35
70
50
20
M a x.
45
45
60
140
Unit
A
A
µs
µs
o_C
o_C
mA
mA
J
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