VN16BSP Datasheet, PDF (3/9 Pages) STMicroelectronics – ISO HIGH SIDE SMART POWER SOLID STATE RELAY

VN16BSP
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
R_{thj- amb} Thermal Resistance Junction-ambient ($)
($) When mounted using minimum recommended pad size on FR-4 board
Max
1.5
Max
50
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (8 < V_CC < 16 V; -40 ≤ T_j ≤ 125 ^oC unless otherwise specified)
POWER
Symb ol
V_{C C}
In(*)
Ron
P a ram et er
Supply Voltage
Nominal Current
On State Resistance
Test Conditions
Tc = 85 ^oC VDS(on) ≤ 0.5 VCC = 13 V
IOUT = In VCC = 13 V Tj = 25 ^oC
Min.
6
5.6
0.038
Typ .
13
M a x.
26
8.8
0.06
Unit
V
A
Ω
IS
Supply Current
Of f St ate VCC = 13 V Tj ≥ 25 ^oC
VDS(MAX) Maximum Volt age Drop IOUT = 20 A VCC = 13 V Tc = 85 ^oC
1
R_i
Output to GND Internal T_j = 25 ^oC
5
Impedance
25
50
µA
1.8
V
10
20
KΩ
SWITCHING
Symb ol
t d ( o n )(^ )
t_r(^)
td(off )(^)
tf(^)
(di/ dt) on
(di / dt ) o f f
V_demag
P a ram et er
Test Conditions
Turn-on Delay Time Of Rload = 1.6 Ω
Output Current
Rise Time Of Output
Cu r re nt
R_load = 1.6 Ω
Turn-off Delay Time O f
Output Current
Fall Time Of Output
Cu r re nt
Rload = 1.6 Ω
Rload = 1.6 Ω
Turn-on Current Slope Rload = 1.6 Ω VCC = 13 V
Turn-off Current Slope Rload = 1.6 Ω VCC = 13 V
Inductive Load Clamp R_load = 1.6 Ω L = 1 mH
Voltage
Min.
5
Typ .
50
M a x.
500
Unit
µs
40
100 680
µs
10
100 500
µs
40
100 680
µs
0.008
0.008
-24 -18
0.1 A/µs
0.1 A/µs
-14
V
LOGIC INPUT
Symb ol
V_IL
V_{I H}
V_I(hyst.)
IIN
VICL
P a ram et er
Input Low Level
Voltage
Input High Level
Voltage
Input Hysteresis
Voltage
Input Current
Input Clamp Voltage
Test Conditions
VIN = 5 V Tj = 25 ^oC
IIN = 10 mA
I_IN = -10 mA
Min.
Typ .
M a x.
1.5
Unit
V
3.5
(•)
V
0.2
1
1.5
V
100
µA
5
6
7
V
-0.7
V
3/9