TS861 Datasheet, PDF (3/15 Pages) STMicroelectronics – RAIL TO RAIL MICROPOWER BICMOS COMPARATORS

TS861-TS862-TS864
ELECTRICAL CHARACTERISTICS
V_CC = +2.7V
T_amb = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
Input Offset Voltage
TS861/2/4
3
V_io
Tmin<T<Tmax
TS861/2/4A
3
Tmin<T<Tmax
∆V_io Input Offset Voltage Drift
6
I_io
Input Offset Current ¹⁾
1
Tmin<T<Tmax
I_ib
Input Bias Current ¹⁾
1
Tmin<T<Tmax
High Level Output Voltage
V_OH
Isource=2.5mA
Tmin<T<Tmax
2.35 2.45
2.15
Low Level Output Voltage
V_OL
Isink=2.5mA
0.2
Tmin<T<Tmax
A_{vd Large Signal Voltage Gain} ²⁾
240
CMR Common Mode Rejection Ratio
0 < V_ICM < 2.7V
65
SVR Supply Voltage Rejection Ratio
0 < Vcc < 10V
80
Supply current per comparator
I_CC
no load, output low
6
no load, output high
8
Tplh Propagation delay from output low to output high
V_ICM=1.35V, f=10kHz, C_L=50pF
overdrive = 10mV
1.5
overdrive = 100mV
0.6
Tphl Propagation delay from output high to output low
V_ICM=1.35V, f=10kHz, C_L=50pF
overdrive = 10mV
1.5
overdrive = 100mV
0.5
Tf Fall time
f=10kHz, C_L=50pF, overdrive=100mV
20
Tr Rise time
f=10kHz, C_L=50pF, overdrive=100mV
20
1. Maximum values including unavoidable inaccurates of the industrial test.
2. Design evaluation
3. Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation and by design.
Max.
15
18
7
10
150
300
300
600
0.35
0.45
12
14
Unit
mV
µV/°C
pA
pA
V
V
dB
dB
dB
µA
µs
µs
ns
ns
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