TS617 Datasheet, PDF (3/19 Pages) STMicroelectronics – Dual wideband high output current operational amplifier

TS617
2
Electrical characteristics
Electrical characteristics
Table 3. V_CC = ±2.5 V, T_amb = 25° C, full power mode (unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
DC performance
V_io Input offset voltage
T_amb
T_min. < T_amb < T_max.
-10 2.5 10
mV
2.7
ΔV_io V_io drift vs. temperature
T_min. < T_amb < T_max.
5
μV/°C
T_amb
I_ib+ Non-inverting input bias current
T_min. < T_amb < T_max.
-50 -15 +50
μA
-20
I_ib- Inverting input bias current
T_amb
-30 -11 -30
μA
) _CMR
uct(s ^SVR
te ^{Prod PSRR}
Common mode rejection ratio
20 log (ΔV_ic/ΔV_io)
Supply voltage rejection ratio
20 log (ΔV_CC/ΔV_io)
Power supply rejection ratio
20 log (ΔV_CC/ΔV_out)
T_min. < T_amb < T_max.
ΔV_ic = ±1 V
T_min. < T_amb < T_max.
ΔV_CC = ±2 V to ±2.5 V
T_min. < T_amb < T_max.
Gain = +4, Rfb = 390 Ω
ΔV_CC = ±100 mV at 100 kHz
Full power, no load
- ^{Obsole ICC Supply current per operator}
T_min. < T_amb < T_max.
Medium power, no load
T_min. < T_amb < T_max.
Low power, no load
t(s)^{Tmin. < Tamb < Tmax.}
Dynamic performance and output characteristics
uc _{Small signal Vout = 20 mVp-p}
rod ^{RL = 100 Ω}
Gain = +2, Rfb = 620 Ω
te ^{P Bw}
-3 dB bandwidth in small signal
Gain = +4, Rfb = 390 Ω
Gain = +8, Rfb = 390 Ω
le ^{Gain = +4, medium power}
o _{Gain = +4, low power}
Obs^ROL ^{Open-loop transimpedance}
R_L = 100 Ω,V_out = 2 Vp-p
-12
45
51
50
50
76
55
50
9
11
10
7
8
7.5
2
3
2.3
125
70 105
55
90
33
50 110
dB
dB
dB
mA
mA
mA
MHz
kΩ
T_min. < T_amb < T_max.
90
SR Slew rate
V_out = 3 Vp-p, gain = +4,
R_L = 100 Ω
Medium power
300 450
400
V/μs
Low power
100
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