TN2015H-6FP Datasheet, PDF (3/9 Pages) STMicroelectronics – High temperature 20 A SCRs

TN2015H-6FP
Characteristics
Symbol
V_TM
V_t0
R_d
I_DRM,
I_RRM
Table 4. Static characteristics
Test conditions
I_TM = 40 A, t_p = 380 µs
Threshold voltage
Dynamic resistance
V_D = V_DRM, V_R = V_RRM
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
Table 5. Thermal resistance
Symbol
Parameter
R_th(j-c)
R_th(j-a)
Junction to case (AC)
Junction to ambient (DC)
Max.
Max.
Max.
Max.
Value
Unit
1.6
V
0.82
V
17.5
mΩ
5
µA
2
mA
Value
4.0
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus
average on-state current
Figure 2. Average and DC on-state current
versus case temperature
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Figure 3. Average and DC on-state current
versus ambient temperature
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Figure 4. Relative variation of thermal
impedance versus pulse duration
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