TN1215-600B Datasheet, PDF (3/5 Pages) STMicroelectronics – STANDARD SCR

Fig. 1: Maximum average power dissipation
versus average on-state current .
P(W)
14
12
10
8
α
6
4
2
0
0
2
α
α
α
α
IT(av)(A)
4
6
8
360°
α
10
12
TN1215-600B
Fig. 2 : Correlation between maximum average
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances.
P(W)
14
α
12
10
8
6
Rth=70°C/W
4
Rth=37°C/W
2
0
0
20
40
60
80
Tamb(°C)
Tcase (°C)
Rth=0°C/W
105
110
115
120
125
100 120 140
Fig. 3: Average and D.C. on-state current versus
case temperature.
IT(av)(A)
14
D.C.
12
10
8
α
6
4
2
Tcase(°C)
0
0
25
50
75
100
125
Fig. 4: Average and D.C. on-state current versus
ambient temperature (Printed circuit board FR4,
SCu=0.5cm2).
IT(av)(A)
2.50
2.25
2.00
1.75
D.C.
1.50
1.25 ^α
1.00
0.75
0.50
0.25
0.00
0
25
Tamb(°C)
50
75
100
125
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout).
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 6: Relative variation of gate trigger current and
holding current versus junction temperature
Igt,IH[Tj]/Ig,IH[Tj=25°C]
2.5
2.0
Igt
1.5
IH
1.0
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140
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