TL082 Datasheet, PDF (3/11 Pages) National Semiconductor (TI) – Wide Bandwidth Dual JFET Input Operational Amplifier

TL082 - TL082A - TL082B
ELECTRICAL CHARACTERISTICS
V_CC = ±15V, T_amb = +25°C (unless otherwise specified)
Symbol
Parameter
V_io
DV_io
I_io
I_ib
A_vd
SVR
I_CC
Input Offset Voltage (R_s = 50Ω)
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
TL082
TL082A
TL082B
TL082
TL082A
TL082B
Input Offset Voltage Drift
Input Offset Current - note ¹⁾
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
Input Bias Current -note 1
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
Large Signal Voltage Gain (R_L = 2kΩ, V_o = ±10V)
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
Supply Voltage Rejection Ratio (R_S = 50Ω)
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
Supply Current, no load
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
V_icm Input Common Mode Voltage Range
CMR
I_os
±V_opp
SR
t_r
K_ov
GBP
R_i
Common Mode Rejection Ratio (R_S = 50Ω)
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
Output Short-circuit Current
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
Output Voltage Swing
T_amb = +25°C
T_min ≤ T_amb ≤ T_max
RL = 2kΩ
RL = 10kΩ
RL = 2kΩ
RL = 10kΩ
Slew Rate (T_amb = +25°C)
V_in = 10V, R_L = 2kΩ, C_L = 100pF, unity gain
Rise Time (T_amb = +25°C)
V_in = 20mV, R_L = 2kΩ, C_L = 100pF, unity gain
Overshoot (T_amb = +25°C)
V_in = 20mV, R_L = 2kΩ, C_L = 100pF, unity gain
Gain Bandwidth Product (T_amb = +25°C)
V_in = 10mV, R_L = 2kΩ, C_L = 100pF, f= 100kHz
Input Resistance
TL082 I,M,A C,AI,AM,
BC,BI,BM
TL082C
Unit
Min. Typ. Max. Min. Typ. Max.
3 10
3
6
1
3
13
7
5
10
mV
3 10
13
10
µV/°C
5 100
4
5 100 pA
10 nA
20 200
20
20 400 pA
20 nA
50 200
25
25 200
15
V/mV
dB
80 86
70 86
80
70
1.4 2.5
2.5
mA
1.4 2.5
2.5
±11 +15
±11 +15
V
-12
-12
dB
80 86
70 86
80
70
mA
10 40 60 10 40 60
10
60 10
60
10 12
12 13.5
10
12
8 16
0.1
10 12
12 13.5
10
12
8 16
0.1
V
V/µs
µs
%
10
10
2.5 4
10¹²
2.5 4
10¹²
MHz
Ω
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