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| TIP41A_05 Datasheet, PDF (3/10 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTOR | |||
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TIP42A
2 Electrical Characteristics
2 Electrical Characteristics
Tcase = 25°C; unless otherwise specified
Table 2. Electrical Characteristics
Symbol
Parameter
Test Conditions
ICEO Collector Cut-off Current (IB = 0) VCE = 30 V
IEBO Emitter Cut-off Current (IC = 0)
VEB = 5V
ICES Collector Cut-off Current (VBE = 0) VCE = 60V
VCEO(sus) Collector-Emitter
Note: 1 Sustaining Voltage (IB = 0)
IC = 30mA
VCE(sat) Collector-Emitter saturation Voltage IC = 6A __ ___
Note: 1
VBE(on) Base-Emitter Voltage
Note: 1
IC = 6A _____
I B = 0.6A
VCE = 4V
hFE
DC Current Gain
Note: 1
hfe Small Signal Current Gain
IC = 0.3A _
VCE = 4V
IC = 3A _
VCE = 4V
IC = 0.5A VCE = 10V f=1 KHz
IC = 0.5A VCE = 10V f=1 KHz
Min.
60
30
15
20
3
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
For PNP types voltage e current values are negative.
Typ.
Max.
0.7
1
0.4
1.5
2
75
Unit
mA
mA
mA
V
V
V
3/10
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