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| TIP35CW Datasheet, PDF (3/7 Pages) STMicroelectronics – Complementary Silicon High Power Transistors | |||
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TIP35CW / TIP36CW
2 Electrical Characteristics
2 Electrical Characteristics
Table 3. Electrical Characteristics (Tcase = 25oC; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ICEO Collector Cut-off Current
VCE = 60 V
1
(IB = 0)
IEBO Emitter Cut-off Current
VEB = 5 V
1
(IC = 0)
ICES Collector Cut-off Current
VCE = Rated VCEO
0.7
(VBE = 0)
VCEO(SUS) Collector-Emitter
IC = 30 mA
100
Note: 1 Sustaining Voltage (IB = 0)
hFE DC Current Gain
Note: 1
IC = 1.5 A __
VCE = 4 V
25
IC = 15 A _____ VCE = 4 V
10
50
VCE(sat) Collector-Emitter Saturation
IC = 15 A __ _ IB = 1.5 A
1.8
Note: 1 Voltage
IC = 25 A ____ _ IB = 5 A
4
VBE(on) Base-Emitter Voltage
IC = 15 A __
VCE = 4 V
2
Note: 1
IC = 25 A _____ VCE = 4 V
4
fT
Transition Frequency
IC = 1 A VCE = 10 V f = 1 MHz 3
hfe Small Signall Current Gain
IC = 1 A VCE = 10 V f = 1 MHz 25
Unit
mA
mA
mA
V
V
V
V
V
MHz
Note: 1 Pulsed duration = 300 µs, duty cycle â¤1.5%.
2 For PNP types voltage and current values are negative.
3/7
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