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TIP33C_08 Datasheet, PDF (3/7 Pages) STMicroelectronics – Complementary power transistors
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TIP34C
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 140 V
ICEO
Collector cut-off current
(IB = 0)
VCE = 60 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB = 0)
IC = 30 mA
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 3 A __
IC = 10 A _
VBE(on)(1) Base-emitter voltage
IC = 3 A ___
IC = 10 A __
hFE (1) DC current gain
IC = 1 A___
IC = 3 A ___
hfe
Small signal current gain IC = 0.5 A_
f = 1 kHz
fT
Transition frequency
IC = 0.5 A_
f = 1 MHz
100
IB = 0.3 A
IB = 2.5 A
VCE = 4 V
VCE = 4 V
VCE = 4 V 40
VCE = 4 V 20
VCE = 10 V 3
VCE = 10 V 3
0.4 mA
0.7 mA
1 mA
V
1
V
4
V
1.6 V
3
V
100
MHz
Resistive load
ton
Turn-on time
VCC = 30 V
IC = 6 A
0.6
µs
ts
Storage time
IB1 = -IB2 = 0.6 A VBB = -6 V
0.4
µs
tf
Fall time
tp = 20 µs
1
µs
1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.
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