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| TIP142 Datasheet, PDF (3/8 Pages) STMicroelectronics – Complementary power Darlington transistors | |||
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TIP142, TIP147
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off current
(IE = 0)
VCB = 100 V
ICEO
Collector cut-off current
(IB = 0)
VCE = 50 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
VCEO(sus)(1)
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA
VCE(sat)(1)
VBE(on)(1)
Collector-emitter
saturation voltage
Base-emitter on voltage
IC = 5 A
IC = 10 A
IC = 10 A
IB = 10 mA
IB = 40 mA
VCE = 4 V
hFE(1)
DC current gain
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
Resistive load
ton
Turn-on time
toff
Turn-off time
IC = 10 A
RL = 3 Ω
IB1 = -IB2 = 40 mA
1. Pulse test: pulse duration ⤠300 µs, duty cycle ⤠2 %.
Note:
For PNP type voltage and current are negative.
Min. Typ. Max. Unit
1 mA
2 mA
2 mA
100
V
1000
500
2
V
3
V
3
V
0.9
µs
4
µs
Doc ID 4132 Rev 7
3/8
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