THDT58S1 Datasheet, PDF (3/7 Pages) STMicroelectronics – TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

ELECTRICAL CHARACTERISTICS (T_amb = 25°C)
Symbol
V_RM
IRM
VBR
VBO
IH
V_F
I_BO
IPP
C
Parameter
Stand-off voltage
Leakage current at VRM
Breakdown voltage
Breakover voltage
Holding current
Forward Voltage drop
Breakover current
Peak pulse current
Capacitance
1 - PARAMETER RELATED TO THE DIODE LINE/GND
Symbol
VF
IF = 5 A
Test conditions
tp = 500 µs
THDT58S / THDT58S1
I
IF
VBO
VBR
VRM
VF
V
IRM
IH
IBO
Ipp
Value
Unit
5
V
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR
Type
I_RM @ V_RM
max.
V_BR @ I_R
min.
V_BO @ I_BO
max. min. _max.
note1
µA
V
V
mA
V
mA
mA
THDT58S
10
56
58
1
80
150
800
THDT58S1 10
56
58
1
80
Note 1 : See the reference test circuit 1 for IBO and VBO parameters.
Note 2 : See test circuit 2.
Note 3 : VR = 1V, F = 1MHz.
50
800
I_H
min.
note 2
mA
150
150
C
max.
note 3
pF
400
200
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