THBTXXX11D Datasheet, PDF (3/9 Pages) STMicroelectronics – TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE

ELECTRICAL CHARACTERISTICS (T_amb = 25°C)
Symbol
Parameter
V_RM Stand-off voltage
I_RM Leakage current at stand-off voltage
V_R Continuous Reverse voltage
V_BR Breakdown voltage
V_BO Breakover voltage
I_H
Holding current
I_BO Breakover current
V_F
Forward voltage drop
I_PP Peak pulse current
C
Capacitance
I
I_PP
IBO
I_H
I_R
THBTxxx11D
V
V_RM V_BR V_BO
STATIC PARAMETERS
Type
I_RM @ V_RM
I_R @ V_R
max.
max.
note 1
µA
V
µA
V
THBT15011D
5
135
50
150
THBT16011D
5
135
50
160
THBT20011D
5
180
50
200
THBT27011D
5
240
50
270
Note 1:
Note 2:
Note 3:
Note 4:
IR mesuared at VR guarantees VBR > VR
Measured at 50 Hz (1 cycle) test circuit 1.
See the reference test circuit 2.
VR = 1V, F = 1MHz.
V_BO @ I_BO
max. min.
note 2
max.
V
mA
mA
210
50
400
230
50
400
290
50
400
380
50
400
I_H
min
note 3
mA
150
150
150
150
C
max
note 4
pF
80
80
80
80
DYNAMIC BREAKOVER VOLTAGES (Transversal mode)
Type
Symbol
Test conditions (see note 5)
Maximum
THBT15011D V_BO 10/700µs 1.5kV Rp=10Ω IPP=30A
190
1.2/50µs 1.5kV R_p=10Ω I_PP=30A
190
2/10µs 2.5kV R_p=62Ω I_PP=38A
200
THBT16011D V_BO 10/700_µs 1.5kV R_p=10Ω I_PP=30A
200
1.2/50µs 1.5kV R_p=10Ω I_PP=30A
200
2/10µs 2.5kV R_p=62Ω I_PP=38A
210
THBT20011D V_BO 10/700_µs 1.5kV R_p=10Ω I_PP=30A
270
1.2/50µs 1.5kV R_p=10Ω I_PP=30A
270
2/10µs 2.5kV R_p=62Ω I_PP=38A
280
THBT27011D V_BO 10/700_µs 1.5kV R_p=10Ω I_PP=30A
360
1.2/50µs 1.5kV R_p=10Ω I_PP=30A
360
2/10µs 2.5kV R_p=62Ω I_PP=38A
400
Note 5 : See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.
Unit
V
V
V
V
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