THBT200S1 Datasheet, PDF (3/7 Pages) STMicroelectronics – TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbol
Parameter
VRM Stand-off voltage
IRM Leakage current at VRM
VBR Continuous reverse voltage
VBO Breakover voltage
I_H Holding current
I_BO Breakover current
IPP Peak pulse current
C Capacitance
THBT200S1
I
I_pp
I_BO
I_H
IRM
V
V_RM
V_BO
VBR
1 - PARAMETERS RELATED TO ONE TRISIL. (Between TIP and GND or RING and GND)
I_RM @ V_RM
V_BR @ I_R
V_{BO @} I_BO
max.
min.
max.
min.
max.
note 1
µA
V
V
mA
V
mA
mA
10
180
200
1
290
Note 1 :
Note 2 :
Note 3 :
See reference test circuit 1 for IH, IBO and VBO parameters.
See test circuit 2.
VR = 1V, F = 1MHz.
150
800
I_H
min.
note 2
mA
150
C
max.
note 3
pF
200
2 - PARAMETERS RELATED TO
TIP and RING TRISIL.
IRM @ VRM
max.
µA
V
10
180
C
max.
pF
200
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