T2550-12G Datasheet, PDF (3/12 Pages) STMicroelectronics – High static and dynamic commutation

T2550-12x
Table 4. Static characteristics
Symbol
Test conditions
V_T ⁽¹⁾
V_t0 ⁽¹⁾
R_d ⁽¹⁾
I_TM = 35 A, t_p = 380 µs
Threshold voltage
Dynamic resistance
I_DRM
I_RRM
V_DRM = V_RRM = 1200 V
1. For both polarities of A2 referenced to A1
T_j = 25 °C
T_j = 125 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
Max.
Max.
Max.
Max.
Symbol
R_th(j-c) Junction to case (AC)
R_th(j-a) Junction to ambient
Table 5. Thermal resistance
Parameter
D²PAK, TO-220AB
TO-220AB Ins.
TO-220AB, TO-220AB Ins.
S = 1 cm² D²PAK
Characteristics
Value
Unit
1.55
V
0.85
V
20
mΩ
10
µA
6
mA
Value
0.8
1.7
60
45
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus
on-state RMS current (full cycle)
3:



















Į ƒ
_Įƒ
Ä®
,7₅₀₆$




Figure 2. On-state RMS current versus case
temperature
,7₅₀₆$



Į ƒ













72$%
'ð3$.
72$%,QV
7_Fƒ&




Figure 3. On-state RMS current versus ambient
temperature (free air convection)
 ^{,  7506 $}


'ð3$.
6_&8 FPð

72$%
72$%,QV





7_$ƒ&





Figure 4. Surge peak on-state current versus
number of cycles
,760$

1RQUHSHWLWLYH7M ƒ&




 ^{7F ƒ&72$%,QV}


5HSHWLWLYH
 _{7F ƒ&72$%'ð3$.}



WS PV
2QHF\FOH
1XPEHURIF\FOHV


DocID025554 Rev 3
3/12