T1020W Datasheet, PDF (3/5 Pages) STMicroelectronics – SNUBBERLESS TRIAC

Fig.1 : Maximum power dissipation versus RMS
on-state current.
T1020W / 1030W
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
14
180 ^O
= 180^o
12
= 120^o
10
= 90^o
8
= 60^o
6
= 30^o
4
2
I _T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
Fig.3 : RMS on-state current versus case tempera-
ture.
P (W)
14
12
10
Tcase (^oC)
-85
Rth = 0 ^o C/W
2.5^o C/W
5^o C/W
7^o C/W _-95
8
-105
6
4
-115
2
Tamb (^oC)
0
-125
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
I _T(RMS)(A)
12
10
8
= 180^o
6
4
2
Tcas e(^oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 ^o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 ^o C]
1.8
Igt
1.6
1.4
1.2 ^Ih
1.0
0.8
0.6
Tj(^oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Zth/Rth
1
Zth (j-c)
0.1
0.01
Zt h( j-a)
1E-3
1E-2
1E-1 1E +0
1E +1
tp (s)
1E+2 5E+2
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS _M(A)
120
100
80
60
40
20
Number of cycles
0
1
10
Tj initial = 25^oC
100
1 000
3/5
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