T0805XH Datasheet, PDF (3/5 Pages) STMicroelectronics – SENSITIVE GATE TRIACS

Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
T0805xH / T0809xH
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P (W)
12
180 ^O
10
= 180^o
= 120^o
8
= 90^o
6
= 60^o
4 _{= 30}o
2
I _T(RMS) (A)
0
012345678
P (W)
12
10
8
6
4
Tcase (^oC)
Rth = 0 ^o C/W
2.5^o C/W
5^o C/W
7.5^o C/W
-95
-100
-105
-110
-115
2
Tamb (^oC)
-120
0
-125
0 20 40 60 80 100 120 140
Fig.3 : RMS on-state current versus case tempera-
ture.
I _T(RMS)(A)
10
8
6
= 180^o
4
2
Tcas e(^oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 ^o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 ^o C]
1.8
Igt
1.6
1.4
1.2 ^Ih
1.0
0.8
0.6
Tj(^oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS _M(A)
70
60
50
40
30
20
10
Number of cycles
0
1
10
Tj initial = 25^oC
100
100 0
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