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| STX616 Datasheet, PDF (3/8 Pages) STMicroelectronics – High voltage NPN power transistor | |||
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STX616 STX616-AP
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE =0)
VCE(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
VEBO
Emitter-base voltage
(IC = 0)
VCE(sat) (1) Collector-emitter
saturation voltage
VBE(sat) (1)
Base-emitter saturation
voltage
hFE (1) DC current gain
VCE = 980V
VCE = 980V
IC = 10mA
IE = 1mA
IC = 0.2A
IC = 1A
IC = 0.2A
IC = 1A
IC = 500µA
IC = 200mA
IC = 500mA
IC = 1.5A
Tc = 125°C
500
12
IB = 40mA
IB = 200mA
IB = 40mA
IB = 200mA
VCE = 2V
17
VCE = 5V
25
VCE = 5V
12
VCE = 5V
4
50 µA
0.5 mA
V
V
0.5 V
1
V
1
V
1.4 V
RESISTIVE LOAD
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC = 250V IC = 250mA
IB1 = 65mA IB2 = -130mA
0.2 µs
5
µs
0.65 µs
RESISTIVE LOAD
ton
Turn-on time
ts
Storage time
tf
Fall time
INDUCTIVE LOAD
ts
Storage time
tf
Fall time
INDUCTIVE LOAD
ts
Storage time
tf
Fall time
VCC = 250V IC = 0.8A
IB1 = 160mA IB2 = -0.4A
Vcl = 300V
IB1 = 65mA
L = 200µH
IC = 250mA
IB2 = -130mA
Vcl = 300V
IB1 = 160mA
L = 200µH
IC = 0.8A
IB2 = -0.4A
1
µs
2.5 µs
0.35 µs
5
µs
0.5 µs
2.5 µs
0.25 µs
Note (1) Pulsed duration = 300 µs, duty cycle â¤1.5%
3/8
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