STW40N65M2 Datasheet, PDF (3/12 Pages) STMicroelectronics – Switching applications

STW40N65M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM ⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Max. operating junction temperature
± 25
32
20
128
250
15
50
- 55 to 150
150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1) _{Pulse width limited by safe operating area.}
(2) _{ISD ≤ 32 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V}
(3) _{VDS ≤ 520 V}
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
0.5
50
Unit
°C/W
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C,
ID = IAR, VDD = 50 V)
Value
3
820
Unit
A
mJ
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