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STW13NK100Z Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
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STW13NK100Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
1000
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 150 µA
3
3.75
4.5
V
RDS(on) (1) Static Drain-source On
Resistance
VGS = 10V, ID = 6.5 A
0.56 0.70
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 6.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 800V
VDD = 500 V, ID = 7 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 800V, ID = 13 A,
VGS = 10V
Typ.
14
6000
455
100
227
45
35
145
45
190
30
100
Max. Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
266
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
13
A
52
A
VSD (1) Forward On Voltage
ISD = 13 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100A/µs
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
820
ns
12.7
µC
31
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
1050
ns
17.8
µC
34
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/9
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