STV300NH02L Datasheet, PDF (3/9 Pages) STMicroelectronics – N-channel 24V - 0.8mOHM - 280A - PowerSO-10 STripFET TM Power MOSFET

STV300NH02L
2
Electrical characteristics
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 3. On /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1mA, V_GS= 0
I_DSS
Zero gate voltage
V_DS = Max rating,
drain current (V_GS = 0) _{VDS = Max rating, Tc=125°C}
I_GSS
Gate body leakage
current (V_DS = 0)
V_DS = ± 20V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 80A
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 80A @100°C
Min. Typ. Max. Unit
24
V
1 µA
10 µA
±100 nA
1
1.5
2
V
0.8
1 mΩ
1.1
mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_G
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 15V, f = 1 MHz, V_GS =0
Total gate charge
Gate-source charge
Gate-drain charge
V_DD= 12V, I_D= 120A,
V_GS= 10V
(see Figure 2)
Gate input resistance V_DS = 0V, f = 1 MHz, V_GS =0
Min.
Typ. Max. Unit
7055
pF
3251
pF
307
pF
109.4
nC
30.2
nC
26.4
nC
4.4
Ω
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