STTH10R04 Datasheet, PDF (3/11 Pages) STMicroelectronics – High efficiency rectifier

STTH10R04
Characteristics
Figure 1. Conduction losses versus
average forward current
P (W)
18
16
14
12
10
8
6
4
2
0
0
2
d=0.05
d=0.1
d=0.2
IF(av) (A)
4
6
d=0.5
d=1
T
8
10
12
Figure 2. Forward voltage drop versus
forward current
IFM(A)
200
180
T_j=125°C
160
(Maximum values)
140
120
T_j=125°C
(Typical values)
100
80
T_j=25°C
(Maximum values)
60
40
20
VFM(V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Relative variation of thermal
impedance junction to case versus
pulse duration
Z_th(j-c)/R_th(j-c)
1.0
0.9
Single pulse
D²PAK
0.8
DPAK
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04
1.E-03
t_P(s)
1.E-02
1.E-01
1.E+00
Z_th(j-c)/R_th(j-c)
1.0
0.9
Single pulse
TO-220FPAC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
t_P(s)
1.E-01
1.E+00
1.E+01
Figure 5. Peak reverse recovery current
versus dI_F/dt (typical values)
IRM(A)
14
13
I_F=I_F(AV)
12
V_R=200V
11
T_j=125°C
10
9
8
7
6
5
4
3
2
1
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery time versus
dI_F/dt (typical values)
trr(ns)
80
70
60
50
40
30
20
10
0
0 50
I_F=I_F(AV)
V_R=200V
T_j=125°C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
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