STT4NF30L Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 30V - 0.055ohm - 4A - TSOP-6 STripFET MOSFET

STT4NF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 2 A
R_G =4.7 Ω
V_GS = 4.5 V
(see test circuit, figure 3)
V_DD = 24 V I_D = 4 A V_GS = 4.5 V
Min.
Typ.
13
30
Max.
17
40
8
12
3.2
2.6
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
tf
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 24 V I_D = 4 A
RG =4.7 Ω VGS = 4.5 V
(see test circuit, figure 5)
Min.
Typ.
6
9
20
Max.
8
12
26
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 4 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 4 A
di/dt = 100 A/µs
V_DD = 15 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
4
16
Unit
A
A
1.2
V
22
ns
13
nC
1.2
A
3/5