English
Language : 

STT13005 Datasheet, PDF (3/10 Pages) STMicroelectronics – High voltage fast-switching NPN power transistor
◁
STT13005
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current VCE = 700 V
(VBE = 0)
VCE = 700 V TC = 125 °C
100 µA
500 µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 400 V
250 µA
Emitter-base voltage
VEBO
(IC = 0)
IE = 10 mA
9
V
Collector-emitter
VCEO(sus) (1) sustaining voltage
IC = 10 mA
400
(IB = 0)
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 0.5 A
IC = 0.8 A
IC = 1.6 A
IB = 125 mA
_ IB = 0.2 A
_ IB = 0.4 A
0.5 V
1
V
1.5 V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 0.5 A
IC = 0.8 A
IC = 1.6 A
IB = 125 mA
_ IB = 0.2 A
_ IB = 0.4 A
1
V
1.3 V
1.5 V
hFE (1) DC current gain
IC = 0.5 A _ VCE = 5 V
10
IC = 2 A _ _ VCE = 5 V
8
50
Resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC = 1 A
VCC= 125 V
IB1 = -IB2 = 0.2 A
0.4 0.7 µs
3.2 4.5 µs
0.25 0.4 µs
Inductive load
ts
Storage time
tf
Fall time
IC = 1 A
IB1 = 0.2 A
VBE(off) = -5 V L = 50 mH
0.8
µs
VClamp = 300 V
0.16
µs
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Doc ID 13613 Rev 3
3/10
 ▷